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980 PRO SAMSUNG 250GB

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980 PRO SAMSUNG 250GB

980 PRO SAMSUNG 250GB

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980 PRO SAMSUNG 250GB COMES WITH FOLLOWING SPECS AND FEATURES

Unleash the power of the Samsung PCIe® 4.0 NVMe™ SSD 980 PRO for your next-level computing. Leveraging the PCIe® 4.0 interface, the 980 PRO delivers double the data transfer rate of PCIe® 3.0 while being backward compatible for PCIe® 3.0 for added versatility.

Powered by Samsung in-house controller for pcie® 4.0 SSD, the 980 PRO is optimized for speed. It delivers read speeds up to 7,000 MB/s, making it 2 times faster than PCIe® 3.0 SSDs and 12.7 times faster than SATA SSDs. The 980 PRO achieves max speeds on PCIe® 4.0 and may vary in other environments.

The 980 PRO comes in a compact M.2 2280 form factor, which can be easily plugged into desktops and laptops for maximum board design flexibility. The drive is suitable for building high-performance computing systems due to its optimized power efficiency.

High-performance SSDs usually require high-performance thermal control. To ensure stable performance, the 980 PRO uses nickel coating to help manage the controller’s heat level and a heat spreader label to deliver effective thermal control of the NAND chip.

Embedded with Samsung’s cutting-edge thermal control algorithm, the 980 PRO manages heat on its own to deliver durable and reliable performance. To minimize performance fluctuations in the long haul, Samsung’s Dynamic Thermal Guard technology maintains the 980 PRO’s temperature at optimal levels.

Unlock the full power of the 980 PRO with Samsung Magician’s intuitive yet advanced optimization tools. Monitor drive health, optimize performance, protect valuable data, and receive important updates with Magician to ensure you’re always getting the best performance out of your SSD.

Experience superior performance and reliability that you can only get from the world’s number one brand for flash memory since 2003. All firmware and components, including Samsung’s world-renowned DRAM and NAND, are produced in-house, allowing end-to-end integration for quality you can trust.

Model Code (Capacity)1)

  • MZ-V8P250BW (250GB)
    MZ-V8P2T0BW (2TB)
  • MZ-V8P500BW (500GB)
  • MZ-V8P1T0BW (1TB)

General Feature

  • APPLICATION

    Client PCs

  • FORM FACTOR

    M.2 (2280)

  • INTERFACE

    PCIe® Gen 4.0 x4, NVMe™ 1.3c

  • DIMENSION (WxHxD)

    80.15 x 22.15 x 2.38 (mm)

  • WEIGHT

    Max 9.0 g

  • STORAGE MEMORY

    Samsung V-NAND 3-bit MLC

  • CONTROLLER

    Samsung In-house Controller

  • CACHE MEMORY

    Samsung 512MB Low Power DDR4 SDRAM
    (250/500GB)
    Samsung 1GB Low Power DDR4 SDRAM (1TB)
    Samsung 2GB Low Power DDR4 SDRAM (2TB)

Special Feature

  • TRIM SUPPORT

    Supported

  • S.M.A.R.T SUPPORT

    Supported

  • GC (GARBAGE COLLECTION)

    Auto Garbage Collection Algorithm

  • ENCRYPTION SUPPORT

    AES 256-bit Encryption (Class 0), TCG/Opal,
    IEEE1667 (Encrypted drive)

  • WWN SUPPORT

    Not Supported

  • DEVICE SLEEP MODE SUPPORT

    Yes

Performance2)

  • SEQUENTIAL READ

    250GB: Up to 6,400 MB/s
    500GB: Up to 6,900 MB/s
    1TB: Up to 7,000 MB/s
    2TB: Up to 7,000 MB/s

  • SEQUENTIAL WRITE

    250GB: Up to 2,700 MB/s
    500GB: Up to 5,000 MB/s
    1TB: Up to 5,000 MB/s
    2TB: Up to 5,100 MB/s

  • RANDOM READ (4KB, QD32)

    250GB: Up to 500,000 IOPS
    500GB: Up to 800,000 IOPS
    1TB: Up to 1,000,000 IOPS
    2TB: Up to 1,000,000 IOPS

  • RANDOM WRITE (4KB, QD32)

    250GB: Up to 600,000 IOPS
    500GB: Up to 1,000,000 IOPS
    1TB: Up to 1,000,000 IOPS
    2TB: Up to 1,000,000 IOPS

  • RANDOM READ (4KB, QD1)

    250GB: Up to 22,000 IOPS
    500GB: Up to 22,000 IOPS
    1TB: Up to 22,000 IOPS
    2TB: Up to 22,000 IOPS

  • RANDOM WRITE (4KB, QD1)

    250GB: Up to 60,000 IOPS
    500GB: Up to 60,000 IOPS
    1TB: Up to 60,000 IOPS
    2TB: Up to 60,000 IOPS

Environment

  • AVERAGE POWER CONSUMPTION
    (SYSTEM LEVEL)3)

    250GB: Average 5 W Maximum 7 W
    512GB: Average 5.9 W Maximum 7.4 W
    1TB: Average 6.2 W Maximum 8.9 W
    2TB: Average 6.1 W Maximum 7.2 W
    (Burst mode)

  • POWER CONSUMPTION (IDLE)3)

    Max. 35 mW

  • POWER CONSUMPTION (DEVICE SLEEP)

    Max. 5 mW

  • ALLOWABLE VOLTAGE

    3.3 V ± 5 % Allowable voltage

  • RELIABILITY (MTBF)

    1.5 Million Hours Reliability

  • OPERATING TEMPERATURE

    0 – 70 ℃

  • SHOCK

    1,500 G & 0.5 ms (Half sine)

 

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